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NPN General Purpose Transistor PN2222A
NPN General Purpose Transistor
Features
* This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA
Absolute Maximum Ratings (Tamb=25C unless otherwise noted)
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Storage Temperature Symbol VCEO VCBO VEBO IC TSTG Value 40 75 6 1.0 -55 150 Units V V
V
A C
Caution:
1. These ratings are based on a maximum junction temperature of 150C 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-247-2232 Fax: (800)-TAITFAX (800)-TAITRON (800)-824-8329 (661)-257-6060 (661)-257-6415
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NPN General Purpose Transistor PN2222A
Electrical Characteristics (Tamb=25C
Parameter Off Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current On Characteristics VCE=10V, IC =0.1mA VCE =10V, IC =1mA VCE =10V *, IC =10mA (Tamb=-55C) VCE =10V *, IC =150mA VCE =10V *, IC =500mA IC =150mA,IB=15mA IC =500mA,IB=50mA IC =150mA, IB =15mA IC =500mA, IB =50mA 35 50 hFE 75 100 40 IC=10uA, IE=0 IC=10mA, IB=0 IE=10uA,IC=0 VCB=60V,IE=0 VEB=3V,IC=0 BVCBO BVCEO BVEBO ICBO IEBO 75 40 6 0.01 10 V V V uA nA
unless otherwise noted)
Symbol Min. Max. Unit
Test Condition
DC Current Gain
300 0.3 1
Collector- Emitter Saturation Voltage * Base-Emitter Saturation Voltage *
VCE(sat) VBE(sat) 0.6
V V
1.2 2
* Pulse Test: Pulse Width300us, Duty Cycle2.0% Small Signal Characteristics Current Gain Bandwidth Product Output Capacitance Input Capacitance Collector Base Time Constant Noise Figure Real Part of Common-Emitter High Frequency Input Impedance Switching Characteristics Delay Time Rise Time Storage Time Fall Time VCC=30V, VEB(off)=0.5V IC=150mA, IB1=15mA VCC=30V, IC=150mA IB1=IB2=15mA td tr ts tf 10 25 225 60 ns ns ns ns IC=20mA, VCE=20V, f=100MHz VCB=10V, IE=0, f=1MHz VEB=0.5V, IC =0, f=1MHz IC =20mA, VCB=20V, f=31.8MHz IC =100uA, VCE=10V Rs=1.0k, f=1.0KHz IC =20mA, VCE=20V, f=300MHz fT Cobo Cibo rb'Cc NF Re(hie) 300 8.0 25 150 4.0 60 MHz pF pF pS dB
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NPN General Purpose Transistor PN2222A
Thermal Characteristics Total Device Dissipation Derate above 25C Thermal Resistance, Junction to case Thermal Resistance, Junction to Ambient PD RJC RJA 625 5.0 83.3 200 mW mW/C C/W C/W
Dimensions (Unit:mm)
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NPN General Purpose Transistor PN2222A
Typical Characteristics Curves
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NPN General Purpose Transistor PN2222A
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NPN General Purpose Transistor PN2222A
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355 Tel: (800) TAITRON (800) 247-2232 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: taitron@taitroncomponents.com Http://www.taitroncomponents.com
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BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190
TAITRON COMPONETS INCORPORATED E REPRESENTACOES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAUDE - SAO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052
TAITRON COMPONETS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
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